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BCV46-Q - PNP Darlington transistor

General Description

PNP Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High current.
  • High current gain.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number BCV46-Q
Manufacturer Nexperia
File Size 202.79 KB
Description PNP Darlington transistor
Datasheet download datasheet BCV46-Q Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BCV46-Q PNP Darlington transistor 12 May 2022 Product data sheet 1. General description PNP Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: BCV47-Q 2. Features and benefits • High current • High current gain • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • For general AF applications and where high amplification is required 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VCBO collector-base voltage open emitter VCES collector-emitter voltage base short-circuited to emitter IC collector current ICM peak collector current hFE DC current gain VCE = -5 V; IC = -100 mA; Tamb = 25 °C [1] [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.