Datasheet4U Logo Datasheet4U.com

BUK661R6-30C Datasheet N-channel Trenchmos Intermediate Level Fet

Manufacturer: Nexperia

Overview: BUK661R6-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.

General Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

1.2

Key Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

BUK661R6-30C Distributor