Datasheet Details
| Part number | BUK661R6-30C |
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| Manufacturer | Nexperia |
| File Size | 919.64 KB |
| Description | N-channel TrenchMOS intermediate level FET |
| Datasheet |
 BUK661R6-30C Datasheet
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General Description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
Key Features
- AEC Q101 compliant.
- Suitable for intermediate level gate drive sources.
- Suitable for thermally demanding environments due to 175 °C rating 1.3.