BUK6D140-80P Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
BUK6D140-80P Key Features
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Trench MOSFET technology
- Extended temperature range Tj = 175 °C
- Side wettable flanks for optical solder inspection
- AEC-Q101 qualified