BUK6D140-80P
BUK6D140-80P is 80V P-channel Trench MOSFET manufactured by Nexperia.
description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Trench MOSFET technology
- Extended temperature range Tj = 175 °C
- Side wettable flanks for optical solder inspection
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon drain-source on-state resistance
Conditions 25 °C ≤ Tj ≤ 175 °C Tj = 25 °C VGS = -10 V; Tsp = 25 °C Tsp = 25 °C
VGS = -10 V; ID = -2.4 A; Tj = 25 °C
[1] See application note AN90001.
Min Typ Max Unit
- -
-80 V
[1]
-20
- 20
- -
-7.7 A
- -
- 110 140 mΩ
Nexperia
80 V, P-channel Trench...
