BUK7908-40AIE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection.
Key Features
- Electrostatically robust due to integrated protection diodes
- Low conduction losses due to low on-state resistance
- Q101 compliant
- Reduced component count due to integrated current sensor
- Suitable for standard level gate drive sources
