BUK7A1R3-100L Description
Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212 (SOT8000A) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.
BUK7A1R3-100L Key Features
- 175 °C rating suitable for thermally demanding automotive environments
- Reduced cell pitch enables enhanced power density resulting in lower conduction losses
- Fast and efficient switching with optimal damping for low spiking and improved switching
- Large cross-sectional area of exposed drain tab for excellent thermal dissipation and low steady state thermal resistanc
- High Board Level Reliability (BLR), pins absorbing mechanical stress during thermal cycling
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Low transient thermal resistance and package inductance
- High maximum current capability and improved current spreading on silicon die