BUK7K3R7-40N Description
Automotive qualified Dual N-channel standard level MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an LFPAK56D (Dual Power-SO8) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
BUK7K3R7-40N Key Features
- Dual MOSFET
- two silicon dies in one LFPAK56D package for significant space saving
- Fully automotive qualified to AEC-Q101
- 175 °C rating suitable for thermally demanding environments
- Trench 15 e-TBO technology
- Merging benefits of superjunction technology (high ruggedness) and split-gate technology (low RDSon)
- Fast and efficient switching with high damping and low spiking
- Tight VGS(th) limits enable easy paralleling of MOSFETs
- LFPAK Gull Wing leads
- High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages