• Part: BUK7S2R0-40H
  • Description: standard level MOSFET
  • Category: MOSFET
  • Manufacturer: Nexperia
  • Size: 331.12 KB
Download BUK7S2R0-40H Datasheet PDF
Nexperia
BUK7S2R0-40H
BUK7S2R0-40H is standard level MOSFET manufactured by Nexperia.
description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability. 2. Features and benefits - Fully automotive qualified to beyond AEC-Q101: - -55 °C to +175 °C rating suitable for thermally demanding environments - LFPAK88 package: - Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications - Thin package and copper clip enables LFPAK88 to be highly efficient thermally - LFPAK copper clip technology enabling improvements over wire bond packages by: - Increased maximum current capability and excellent current spreading - Improved RDSon - Low source inductance - Low thermal resistance Rth - LFPAK Gull Wing leads: - Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages - Visual (AOI) soldering inspection, no need for expensive x-ray equipment - Easy solder wetting for good mechanical solder joint - Unique 40 V Trench 9 superjunction technology: - Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint - Improved SOA and avalanche capability pared to standard Trench MOS - Tight VGS(th) limits enable easy paralleling of MOSFETs 3. Applications - 12 V automotive systems - 48 V DC/DC systems (on 12 V secondary side) - Higher power motors, lamps and solenoid control - Reverse polarity protection - Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 Min Typ Max Unit - - [1] -...