Datasheet Summary
N-channel TrenchMOS logic level FET
Rev. 3
- 9 November 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Q101 pliant
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps...
