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BUK9611-80E Datasheet PDF

Nexperia BUK9611-80E

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Part No. BUK9611-80E
Datasheet BUK9611-80E Download
Manufacturer
Nexperia
Description N-channel MOSFET
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BUK9611-80E datasheet page 1 preview

FEATURES AND BENEFITS

● AEC Q101 compliant
● Repetitive avalanche rated
● Suitable for thermally demanding environments due to 175 °C rating
● True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C 1.3

APPLICATIONS

● 12V, 24V and 48V Automotive systems
● Motors, lamps and solenoid control
● Start-Stop micro-hybrid applications
● Transmission control
● Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 [1] Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 20 A; VDS = 64 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. Min Typ Max Unit - - 80 V - - 75 A - - 182 W - 8.3 11 mΩ - 16 - nC Nexperia BUK9611-80E N-channel TrenchMOS logic level FET 2.
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