Datasheet Summary
N-channel TrenchMOS logic level FET
Rev. 02
- 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- AEC Q101 pliant
- Low conduction losses due to low on-state resistance
1.3 Applications
- Automotive and general purpose power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain...
