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BUK964R2-55B - N-channel MOSFET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Datasheet Details

Part number BUK964R2-55B
Manufacturer nexperia
File Size 0.97 MB
Description N-channel MOSFET
Datasheet download datasheet BUK964R2-55B Datasheet
Additional preview pages of the BUK964R2-55B datasheet.

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Full PDF Text Transcription

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BUK964R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1.
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