BUK965R8-100E Datasheet | Nexperia

N-channel Trench MOS logic level FET 28 July 2016 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits - AEC Q101 pliant - Repetitive avalanche rated - Suitable for thermally demanding environments due to 175 °C rating - True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C 3. Applications - 12V, 24V and 48V Automotive systems - Motors, lamps and solenoid control - Start-Stop micro-hybrid applications - Transmission control - Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 [1] Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain...