BUK9K12-60E
description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
- Dual MOSFET
- Q101 pliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
[1]
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics FET1...
