BUK9M19-60E
BUK9M19-60E is N-channel MOSFET manufactured by Nexperia.
description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using Trench MOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
- Q101 pliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD gate-drain charge
ID = 10 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 60 V
- - 38 A
- - 62 W
- 16 19 mΩ
- 5.2
- n C
Nexperia
N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 S...
