BUK9Q29-60E Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
BUK9Q29-60E Key Features
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- Fully automotive qualified to AEC-Q101 at 175°C
- Side-wettable flanks for optical solder inspection