BUK9Q29-60E
BUK9Q29-60E is 60V N-channel Trench MOSFET manufactured by Nexperia.
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- Fully automotive qualified to AEC-Q101 at 175°C
- Side-wettable flanks for optical solder inspection
3. Applications
- LED Lighting
- Switching circuits
- DC-DC conversion
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Conditions 25 °C ≤ Tj ≤ 175 °C DC; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C Tmb = 25 °C
VGS = 10 V; ID = 5.6 A; Tj = 25 °C
VDS = 30 V; ID = 5.6 A; VGS = 10 V; Tj = 25 °C
Min Typ Max Unit
- -
-20
- 20
[1]
- -
- -
- 23.7 29 mΩ
-...
