BUK9V13-40H Overview
Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. G1 An internal connection is made between the source (S1) of the high- side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM G2 applications.
BUK9V13-40H Key Features
- LFPAK56D package with half-bridge configuration enables
- Reduced PCB layout plexity
- PCB shrinkage through reduced ponent footprint for 3-phase motor drive
- Improved system level Rth(j-amb) due to optimized package design
- Lower parasitic inductance to support higher efficiency
- Footprint patibility with LFPAK56D Dual package
- Advanced AEC-Q101 grade Trench 9 silicon technology
- Low power losses, high power density
- Superior avalanche performance
- Repetitive avalanche rated