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BUK9Y22-30B - N-channel MOSFET

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General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Overview

BUK9Y22-30B N-channel TrenchMOS logic level FET Rev.

04 — 7 April 2010 Product data sheet 1.

Product profile 1.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for logic level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Semiconductors Logo BUK9Y22-30B N-Channel MOSFET NXP Semiconductors

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