Nexperia ES1B
100V 1A hyperfast recovery rectifier
FEATURES AND BENEFITS
● Reverse voltage: VR ≤ 100 V● Forward current: IF ≤ 1 A
● Hyperfast recovery time: trr ≤ 35 ns
● Pt doped life time control
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability 3.
APPLICATIONS
● Rectification● Reverse polarity protection
● Fast switching
● Freewheeling applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF(AV) average forward current δ = 0.5; f = 20 kHz; square wave; Tsp ≤ 140 °C VRRM repetitive peak reverse Tj = 25 °C voltage VR reverse voltage VF forward voltage IF = 1 A; pulsed; Tj = 25 °C [1] IF = 1 A; pulsed; Tj = 125 °C [1] IR reverse current VR = 100 V; pulsed; Tj = 25 °C [1] VR = 100 V; pulsed; Tj = 125 °C [1] [1] Very short pulse, in order to maintain a stable junction temperature. Min Typ Max Unit - - 1 A - - 100 V - - 100 V - - 0.95 V - 0.77 - V - - 5 µA - - 150 µA Nexperia ES1B 100 V, 1 A hyperfast recovery rectifier in SMA 5. Pinning information Table 2.