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GANB4R8-040CBA - Gallium Nitride (GaN) FET

General Description

The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package.

It is a normally-off emode device offering superior performance.

2.

Key Features

  • Enhancement mode - normally-off power switch.
  • Bi-directional device.
  • Ultra high switching speed capability.
  • Ultra-low on-state resistance.
  • RoHS, Pb-free, REACH-compliant.
  • High efficiency and high power density.
  • Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm 3.

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Full PDF Text Transcription (Reference)

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GANB4R8-040CBA 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) 10 April 2024 Product data sheet 1. General description The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Bi-directional device • Ultra high switching speed capability • Ultra-low on-state resistance • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm 3.