GANE3R9-150QBA
description
The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (Ga N) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
2. Features and benefits
- Enhancement mode
- normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- Ro HS, Pb-free, REACH-pliant
- High efficiency and high power density
- Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
3. Applications
- High power density and high efficiency power conversion
- AC-to-DC converters, (secondary stage)
- High frequency DC-to-DC converters in 48 V systems
- Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
- Data and tele (AC-to-DC and DC-to-DC) converters
- Motor drives
- Li DAR (non-automotive)
- Class D audio amplifiers
4. Quick reference...
