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GANE3R9-150QBA - Gallium Nitride (GaN) FET

Overview

VQFN7 GANE3R9-150QBA 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 30 April 2024 Product data sheet 1.

Key Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.