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GANE7R0-100CBA - 100V Gallium Nitride FET

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General Description

The GANE7R0-100CBA is a a general purpose 100 V, 7.0 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP).

It is a normally-off e-mode device offering superior performance and very low on-state resistance.

2.

Overview

WLCSP6 GANE7R0-100CBA 100 V, 7.0 mOhm Gallium Nitride (GaN) FET in a 2.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) 13 March 2025 Product data sheet 1.

Key Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

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