GANE7R0-100CBA
Description
The GANE7R0-100CBA is a a general purpose 100 V, 7.0 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP).
Key Features
- Enhancement mode - normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- RoHS, Pb-free, REACH-pliant
- High efficiency and high power density
- Wafer Level Chip-Scale Package (WLCSP) 2.5 mm x 1.5 mm
Applications
- High power density and high efficiency power conversion
