Nexperia MMBZ16VTAL
The device is designed for ESD and transient overvoltage protection of up to two signal lines.FEATURES AND BENEFITS
● Unidirectional protection of two lines● Reverse standoff voltage: VRWM = 13 V
● Average measured surge robustness: IPPM = 14 A (8/20 µs) / IPPM = 2.54 A (10/1000 µs)
● Typical reverse leakage current: IRM = 0.1 nA
● Tight breakdown voltage tolerance: ΔVBR +/- 2%
● AEC-Q101 qualified 3.
APPLICATIONS
● Automotive in-vehicle networks protection● Industrial application
● Power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage IPPM rated peak pulse current VCL clamping voltage [1] According to IEC 61643-321. [2] Measured from pin 1 or 2 to pin 3. Conditions Tj = 25 °C Min Typ Max Unit - - 13 V tp = 10/1000 µs [1] [2] - - 1.9 A IPP = 1.7 A; tp = 10/1000 µs; Tj = 25 °C [1] [2] - 19.5 23 V Nexperia MMBZ16VTAL High surge current unidirectional double ESD protection diodes 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 K1 cathode 2 K2 cathode 3 A common anode Simplified outline 3 Graphic symbol 3 12 TO-236AB (SOT23) 12 006aaa154 6.