NGB15T65M3DFP - 650V 15A trench field-stop IGBT

Description

NGB15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

It combines carrier stored trench-gate and field-stop (FS) structures.

NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs.

Features

Device current is rated at 15 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature 175 °C.
Fully rated and fast reverse recovery diode.
5 μs short circuit withstand time 3.

nexperia

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Datasheet Details

Part number	NGB15T65M3DFP
Manufacturer	nexperia
File Size	266.64 KB
Description	650V 15A trench field-stop IGBT
Datasheet	NGB15T65M3DFP Datasheet

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NGB15T65M3DFP 650 V, 15 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 6 June 2025 Product data sheet 1. General description NGB15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 15 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications. 2.

Published: Jul 13, 2025 |