NGB15T65M3DFP Datasheet 650v 15a Trench Field-stop IGBT

Manufacturer: Nexperia

Overview: NGB15T65M3DFP 650 V, 15 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 6 June 2025 Product data sheet 1.

Datasheet Details

Part number	NGB15T65M3DFP
Manufacturer	Nexperia
File Size	266.64 KB
Description	650V 15A trench field-stop IGBT
Datasheet	NGB15T65M3DFP-nexperia.pdf

General Description

NGB15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology.

It combines carrier stored trench-gate and field-stop (FS) structures.

NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs.

Key Features

Device current is rated at 15 A.
Low conduction and switching losses.
Stable and tight parameters for easy parallel operation.
Maximum junction temperature 175 °C.
Fully rated and fast reverse recovery diode.
5 μs short circuit withstand time 3.

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