• Part: NGB15T65M3DFP
  • Manufacturer: Nexperia
  • Size: 266.64 KB
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NGB15T65M3DFP Key Features

  • Device current is rated at 15 A
  • Low conduction and switching losses
  • Stable and tight parameters for easy parallel operation
  • Maximum junction temperature 175 °C
  • Fully rated and fast reverse recovery diode
  • 5 μs short circuit withstand time

NGB15T65M3DFP Description

NGB15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It bines carrier stored trench-gate and field-stop (FS) structures. NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs.