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NSF030120D7A0-Q - 1200V N-channel SiC MOSFET

General Description

The NSF030120D7A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology.

Key Features

  • Excellent RDSon temperature stability.
  • Very low switching losses.
  • Fast reverse recovery.
  • Fast switching speed.
  • Temperature independent turn-off switching losses.
  • Very fast and robust intrinsic body diode.
  • Faster commutation and improved switching due to the additional Kelvin source pin.
  • Qualified for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TO-263-7 NSF030120D7A0-Q 1200 V, 30 mΩ, N-channel SiC MOSFET for automotive applications 30 April 2025 Product data sheet 1. General description The NSF030120D7A0-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage automotive applications like E-vehicle onboard charger, DC-DC converter and auxiliary drives. 2.