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NSF030120T2A0 - 1200V N-channel SiC MOSFET

General Description

The NSF030120T2A0 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology.

Key Features

  • Excellent RDSon temperature stability.
  • Very low switching losses.
  • Fast reverse recovery.
  • Fast switching speed.
  • Temperature independent turn-off switching losses.
  • Very fast and robust intrinsic body diode.
  • Faster commutation and improved switching due to the additional Kelvin source pin 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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X.PAK NSF030120T2A0 1200 V, 30 mΩ, N-channel SiC MOSFET 24 March 2025 Product data sheet 1. General description The NSF030120T2A0 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives. 2.