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NSF080120L4A0 - N-channel SiC MOSFET

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General Description

The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology.

Overview

NSF080120L4A0 1200 V, 80 mΩ, N-channel SiC MOSFET 2 February 2024 Product data sheet 1.

Key Features

  • Excellent RDSon temperature stability.
  • Very low switching losses.
  • Fast reverse recovery.
  • Fast switching speed.
  • Temperature independent turn-off switching losses.
  • Very fast and robust intrinsic body diode.
  • Faster commutation and improved switching due to the additional Kelvin source pin. 3.

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