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NX5020UNBKW - 50V N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Very low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM 3.

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NX5020UNBKW 50 V, N-channel Trench MOSFET 10 April 2025 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection typically > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.