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PBHV9050Z - PNP Transistor

General Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Key Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • AEC-Q101 qualified.
  • Medium power SMD plastic package 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 1 — 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits „ High voltage „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ AEC-Q101 qualified „ Medium power SMD plastic package 1.3 Applications „ Electronic ballasts „ LED driver for LED chain module „ LCD backlighting „ Automotive motor management „ Flyback converters „ Hook switch for wired telecom „ Switch Mode Power Supply (SMPS) 1.