Datasheet Summary
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
Rev. 1
- 19 August 2010
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- AEC-Q101 qualified
- Medium power SMD plastic package
1.3 Applications
- Electronic ballasts
- LED driver for LED chain module
- LCD backlighting
- Automotive motor management
- Flyback...
