Datasheet4U Logo Datasheet4U.com

PBRN113Z - NPN RET

📥 Download Datasheet

General Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.

Table 1.

Overview

PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 10 kΩ Rev.

01 — 26 February 2007 Product data sheet 1.

Product profile 1.

Key Features

  • I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Semiconductors Logo PBRN113E NPN 800 mA 40 V BISS RETs NXP Semiconductors

More Datasheets from Nexperia

Part Number Description
PBRN113ZK NPN RET
PBRN113ZS NPN RET
PBRN113ZT NPN RET
PBRN113E NPN RET
PBRN113EK NPN RET
PBRN113ES NPN RET
PBRN113ET NPN RET
PBRN123E NPN RET
PBRN123EK NPN RET
PBRN123ES NPN RET