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PBRN123E - NPN RET

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General Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.

Table 1.

Overview

PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev.

01 — 27 February 2007 Product data sheet 1.

Product profile 1.

Key Features

  • I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Semiconductors Logo PBRN123E NPN 800 mA 40 V BISS RETs NXP Semiconductors

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