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PBRN123EK - NPN RET

Download the PBRN123EK datasheet PDF. This datasheet also covers the PBRN123E variant, as both devices belong to the same npn ret family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (PBRN123E-nexperia.pdf) that lists specifications for multiple related part numbers.

General Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.

Table 1.

Overview

PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev.

01 — 27 February 2007 Product data sheet 1.

Product profile 1.

Key Features

  • I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Semiconductors Logo PBRN123E NPN 800 mA 40 V BISS RETs NXP Semiconductors

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