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PBSM5240PF - PNP Transistor

Datasheet Summary

Description

Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET.

The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High energy efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet Details

Part number PBSM5240PF
Manufacturer nexperia
File Size 1.34 MB
Description PNP Transistor
Datasheet download datasheet PBSM5240PF Datasheet
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PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energy efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ Loadswitch „ Power management „ Power switches (e.g.
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