PBSS4021PZ
PBSS4021PZ is PNP transistor manufactured by Nexperia.
description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4021NZ.
1.2 Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (h FE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms
IC =
- 6 A; IB =
- 600 m A
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- -
- 20 V
- -
- 6.6 A
- -
- 20 A
[1]
- 22 33 mΩ
Nexperia
20 V, 6.6 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 4
Pinning Description base collector emitter...
