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PBSS4021PZ - PNP transistor

Datasheet Summary

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4021NZ.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet Details

Part number PBSS4021PZ
Manufacturer nexperia
File Size 706.88 KB
Description PNP transistor
Datasheet download datasheet PBSS4021PZ Datasheet
Additional preview pages of the PBSS4021PZ datasheet.

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Full PDF Text Transcription

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PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev. 01 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NZ. 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High energy efficiency due to less heat generation „ AEC-Q101 qualified „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ Loadswitch „ Battery-driven devices „ Power management „ Charging circuits „ Power switches (e.g. motors, fans) 1.
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