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PBSS4021SPN - NPN/NPN Transistor

Datasheet Summary

Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet Details

Part number PBSS4021SPN
Manufacturer nexperia
File Size 816.12 KB
Description NPN/NPN Transistor
Datasheet download datasheet PBSS4021SPN Datasheet
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Full PDF Text Transcription

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PBSS4021SPN 20 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia PBSS4021SPN SOT96-1 Name SO8 NPN/NPN complement PBSS4021SN PNP/PNP complement PBSS4021SP 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
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