Datasheet Summary
30 V, 4.2 A PNP low VCEsat (BISS) transistor
Rev. 01
- 1 April 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4032NX.
1.2 Features and benefits
- Very low collector-emitter saturation voltage VCEsat
- Optimized switching time
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3...
