Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D088
PBSS4120T 20 V, 1 A NPN low VCEsat (BISS) transistor
Product data sheet
2003 Sep 29
NXP Semiconductors
20 V, 1 A NPN low VCEsat (BISS) transistor
Product data sheet
Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- Cost effective alternative to MOSFETs in specific applications.
APPLICATIONS
- Power management
- DC/DC conversion
- Supply line switching
- Battery charger
- LCD backlighting.
- Peripheral driver
- Driver in low supply voltage applications (e.g. lamps and LEDs)
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