PBSS4120T Description
NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage.
PBSS4120T Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- Cost effective alternative to MOSFETs in specific