PBSS5130PAP Datasheet 1a PNP/pnp Low Vcesat (biss) Transistor

Manufacturer: Nexperia

Overview: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1.

Datasheet Details

Part number	PBSS5130PAP
Manufacturer	Nexperia
File Size	738.25 KB
Description	1A PNP/PNP low VCEsat (BISS) transistor
Datasheet	PBSS5130PAP-nexperia.pdf

General Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4130PANP.

NPN/NPN complement: PBSS4130PAN.

Key Features

Very low collector-emitter saturation voltage VCEsat.
High collector current capability IC and ICM.
High collector current gain hFE at high IC.
Reduced Printed-Circuit Board (PCB) requirements.
High energy efficiency due to less heat generation.
AEC-Q101 qualified 3.

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