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PBSS5230PAP - 2A PNP/PNP low VCEsat (BISS) transistor

General Description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4230PANP.

NPN/NPN complement: PBSS4230PAN.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain hFE at high IC.
  • Reduced Printed-Circuit Board (PCB) requirements.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS5230PAP
Manufacturer Nexperia
File Size 739.39 KB
Description 2A PNP/PNP low VCEsat (BISS) transistor
Datasheet download datasheet PBSS5230PAP Datasheet

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Full PDF Text Transcription (Reference)

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PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. motors, fans) 4.