Nexperia PBSS5240X
PNP transistor
FEATURES AND BENEFITS
● Low collector-emitter saturation voltage VCEsat● High collector current capability IC and ICM
● High efficiency due to less heat generation 1.3
APPLICATIONS
● DC-to-DC conversion● Supply line switching
● Battery charger
● LCD backlighting
● Driver in low supply voltage applications (e.g. lamps and LEDs)
● Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat ICRM Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current collector-emitter saturation resistance repetitive peak collector current IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C tp ≤ 20 ms; δ ≤ 0.33 ; pulsed Min Typ Max Unit - - -40 V - - -2 A - - -3 A - - 310 mΩ - - -2.5 A Nexperia PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 E emitter 2 C collector 3 B base Simplified outline 321 SOT89 Graphic symbol C B E sym132 3.