Datasheet Details
| Part number | PBSS5260PAPS |
|---|---|
| Manufacturer | Nexperia |
| File Size | 728.79 KB |
| Description | PNP/PNP Transistor |
| Datasheet |
 PBSS5260PAPS Datasheet
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General Description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
2.
Key Features
- Very low collector-emitter saturation voltage VCEsat.
- High collector current capability IC and ICM.
- High collector current gain hFE at high IC.
- Reduced Printed-Circuit Board (PCB) requirements.
- Exposed heat sink for excellent thermal and electrical conductivity.
- High energy efficiency due to less heat generation.
- Suitable for Automatic Optical Inspection (AOI) of solder joints.
- AEC-Q101 qualified 3.
