PBSS5350Z-Q
Description
PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z-Q.
Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- Qualified according to AEC-Q101 and recommended for use in automotive applications
