PBSS5350Z-Q Description
PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PBSS5350Z-Q Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- Qualified according to AEC-Q101 and remended for use in automotive