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PBSS5350Z-Q - 3A PNP low VCEsat transistor

General Description

PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High energy efficiency due to less heat generation.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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PBSS5350Z-Q 50 V, 3 A PNP low VCEsat transistor 31 August 2022 Product data sheet 1. General description PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • High energy efficiency due to less heat generation • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • DC/DC converters • Supply line switching • Battery charger • LED backlighting • Linear voltage regulation (LDO) • Driver in low supply voltage applications, e.g.