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PBSS9110Z - 100V 1A PNP low VCEsat transistor

General Description

PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS9110Z
Manufacturer Nexperia
File Size 296.68 KB
Description 100V 1A PNP low VCEsat transistor
Datasheet download datasheet PBSS9110Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS9110Z 100 V, 1 A PNP low VCEsat transistor 31 July 2025 Product data sheet 1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • High-voltage DC-to-DC conversion • High-voltage MOSFET gate driving • High-voltage motor control • High-voltage power switches (e.g. motors, fans) • Automotive applications 4. Quick reference data Table 1.