PBSS9110Z Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- AEC-Q101 qualified
- Part: PBSS9110Z
- Manufacturer: Nexperia
- Size: 296.68 KB
Other PBSS9110Z Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
PBSS9110Z | 1A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
PBSS9110AS | 1A PNP low VCEsat (BISS) transistor |
|
NXP Semiconductors |
PBSS9110D | PNP transistor |
|
NXP Semiconductors |
PBSS9110T | PNP low VCEsat (BISS) transistor |
|
NXP Semiconductors |
PBSS9110X | PNP Transistor |
PBSS9110Z Description
PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PBSS9110Z Applications
- High-voltage DC-to-DC conversion