PDTC114YT-Q Datasheet PDF (100mA NPN resistor-equipped transistor)

PDTC114YT-Q - 100mA NPN resistor-equipped transistor

Description

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Features

100 mA output current capability.
Built-in bias resistors.
Simplifies circuit design.
Reduces component count.
Reduces pick and place costs.
Qualified according to AEC-Q101 and recommended for use in automotive.

Datasheet Details

Part number	PDTC114YT-Q
Manufacturer	nexperia
File Size	224.32 KB
Description	100mA NPN resistor-equipped transistor
Datasheet	PDTC114YT-Q Datasheet
Additional preview pages of the PDTC114YT-Q datasheet.

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Full PDF Text Transcription

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PDTC114YT-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ 25 April 2023 Product data sheet 1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YT 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Digital application in automotive and industrial segments • Cost-saving alternative for BC847-Q series in digital applications • Controlling IC inputs • Switching loads 4. Quick reference data Table 1.

Published: Apr 18, 2025 |