• Part: PDTC123EMB
  • Description: NPN resistor-equipped transistor
  • Manufacturer: Nexperia
  • Size: 699.91 KB
Download PDTC123EMB Datasheet PDF
PDTC123EMB page 2
Page 2
PDTC123EMB page 3
Page 3

Datasheet Summary

SOT883B NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 - 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP plement: PDTA123EMB. 1.2 Features and benefits - 100 mA output current capability - Reduces ponent count - Built-in bias resistors - Reduces pick and place costs - Simplifies circuit design - AEC-Q101 qualified - Leadless ultra small SMD plastic package - Low package height of 0.37 mm 1.3 Applications - Low-current peripheral driver - Control of IC inputs - Replaces general-purpose...