Nexperia PESD3V3L4BHC
The device is housed in a leadless extremely thin small DFN1308-6 (SOT8006) Surface-Mounted Device (SMD) plastic package. for 6 A 8/20 µs pulse • ESD protection up to 20 kV • Very low dynamic resistance Rdyn = 0.2 Ω (TLP) 3.| Part No. | PESD3V3L4BHC |
|---|---|
| Datasheet | PESD3V3L4BHC Download |
| Manufacturer |  Nexperia |
| Description | 4-fold bidirectional ESD protection array |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Bidirectional ESD protection of up to 4 lines● Very high surge robustness; IPP = 6 A for 8/20 µs pulse
● Very low clamping voltage: VCL = 7.3 V typ.
APPLICATIONS
ESD protection for low-speed lines in portable communication, consumer devices and computing devices. 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage IPPM rated peak pulse current Vt1 trigger voltage Conditions Tamb = 25 °C tp = 8/20 µs; Tamb = 25 °C Tamb = 25 °C [1] [1] Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5. Min Typ Max Unit - - 3.3 V - - 6A - 6.7 - V Nexperia PESD3V3L4BHC 4-fold bidirectional ESD protection array 5. Pinning information Table 2. Pinning information Pin SymbolDESCRIPTION
1 K1 cathode (diode 1) 2 CC common cathode 3 K2 cathode (diode 2) 4 K3 cathode (diode 3) 5 CC common cathode 6 K4 cathode (diode 4) Simplified outline 123 654 DFN1308-6 (SOT8006) Graphic symbol K1 CC K2 K4 CC K3 aaa-030022 6.
