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PESD5V5C1BBSF-Q - Extremely low capacitance bidirectional ESD protection diode

Datasheet Summary

Description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family.

Features

  • Bidirectional ESD protection of one line.
  • VRWM = 5.5 V device.
  • IEC 61000-4-5 (surge): IPPM = 8.1 A.
  • Extremely low diode capacitance Cd = 0.26 pF typical.
  • Extremely low clamping voltage to protect sensitive I/Os.
  • Very low peak clamping for sensitive IC with low-inductance traces between protection and protected system.
  • Extremely low-inductance protection path to ground.
  • ESD protection up to ±15 kV according to IEC 61000-4-2.

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Datasheet Details

Part number PESD5V5C1BBSF-Q
Manufacturer nexperia
File Size 224.48 KB
Description Extremely low capacitance bidirectional ESD protection diode
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Full PDF Text Transcription

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PESD5V5C1BBSF-Q Extremely low capacitance bidirectional ESD protection diode 16 July 2025 Product data sheet 1. General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits • Bidirectional ESD protection of one line • VRWM = 5.5 V device • IEC 61000-4-5 (surge): IPPM = 8.1 A • Extremely low diode capacitance Cd = 0.
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