PHPT60606PY Datasheet Text
PHPT60606PY
60 V, 6 A PNP high power bipolar transistor
9 December 2014
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN plement: PHPT60606NY.
2. Features and benefits
- High thermal power dissipation capability
- Suitable for high temperature applications up to 175 °C
- Reduced Printed-Circuit Board (PCB) requirements paring to transistors in DPAK
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
3. Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
- Motor drive
- Relay replacement
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions collector-emitter voltage open base collector current peak collector current tp ≤ 1 ms; pulsed collector-emitter saturation resistance
IC = -6 A; IB = -600 mA; pulsed; tp ≤ 300...
