PHPT60610NY
PHPT60610NY is NPN Transistor manufactured by Nexperia.
description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP plement: PHPT60610PY
2. Features and benefits
- High thermal power dissipation capability
- High temperature applications up to 175 °C
- Reduced Printed Circuit Board (PCB) requirements paring to transistors in DPAK
- High energy efficiency due to less heat generation
- AEC-Q101 qualified.
3. Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
- Motor drive
- Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
RCEsat collector-emitter saturation resistance
Conditions open base single pulse; tp ≤ 1 ms IC = 10 A; IB = 1 A; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- -
- -
- -
- 25
36 mΩ
Nexperia
60 V, 10 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol...
