PMCM4401UPE Overview
Key Specifications
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Key Features
- Low threshold voltage
- Ultra small package: 0.78 × 0.78 × 0.35 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
