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PMEG200G30ELP - 200V 3A Silicon Germanium rectifier

Description

Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead SurfaceMounted Device (SMD) plastic package.

2.

Features

  • Features.
  • Low forward voltage and low Qrr.
  • Extremely low leakage current.
  • Thermal stability up to 175 °C junction temperature.
  • Fast and smooth switching.
  • Low parasitic capacitance.
  • AEC-Q101 qualified Benefits.
  • Excellent efficiency.
  • Extraordinary safe operating area.
  • Minimal impact on Electro-Magnetic Compatibility (EMC) allowing simplified certification 3.

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Full PDF Text Transcription

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PMEG200G30ELP 200 V, 3 A Silicon Germanium (SiGe) rectifier 22 June 2020 Product data sheet 1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead SurfaceMounted Device (SMD) plastic package. 2. Features and benefits Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal impact on Electro-Magnetic Compatibility (EMC) allowing simplified certification 3.
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